TLP832(f) 2007-10-01 1 toshiba photointerrupter in frared led + phototransistor TLP832(f) lead(pb)-free electronic equipment such as vcrs and cd players office equipment such as copiers, printers and fax machines automatic vending machines various position detection sensors the TLP832(f) photointerrupter consists of a gaas infrared led and an si phototransistor. housed in a short ? lead package, this device is ideal for automatic mounting. ? designed for direct mounting on printed circuit boards (positioning pins included). ? short leads enabling automatic mounting : lead length 3.4mm 0.3mm ? board thickness: 1.6mm or less ? gap: 5mm ? resolution: slit width = 0.5mm ? high current transfer ratio: i c /i f = 5% (min) ? high temperature operation: t opr = 95c (max) ? high response speed: t r , t f = 15 s (typ.) ? detector impermeable to visible light ? package material: polybutylene terephthalate (ul94v ? 0, black) toshiba 11 ? 14f1 weight: 0.58 g (typ.)
TLP832(f) 2007-10-01 2 absolute maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f 50 ma 25c < ta Q 85c ?0.33 forward current derating ta > 85c i f / c ?2 ma / c led reverse voltage v r 5 v collector ? emitter voltage v ceo 35 v emitter ?collector voltage v eco 5 v collector power dissipation p c 75 mw collector power dissipation derating (ta > 25c) p c / c ? 1 mw / c detector collector current i c 50 ma operating temperature t opr ?30~85 c storage temperature t stg ?40~100 c soldering temperature (5 s) (note 1) t sol 260 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: at the location of 1.5mm from the resin package bottom markings operating ranges characteristic symbol min typ. max unit supply voltage v cc D 5 24 v forward current i f D D 25 ma operating temperature t opr ?10 D 75 c year of manufacture (last digit of year of manufacture) monthly lot number month of manufacture (january to december denoted by letters a to l respectively)
TLP832(f) 2007-10-01 3 optical and electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit forward voltage v f i f = 10ma 1.00 1.15 1.30 v reverse current i r v r = 5v D D 10 a led peak emission wavelength p i f = 10ma D 940 D nm dark current i d (i ceo ) v ce = 24v, i f = 0 D D 0.1 a detector peak sensitivity wavelength p D 870 D nm current transfer ratio i c / i f v ce = 2v, i f = 10ma 5 D 100 % collector ?emitter saturation voltage v ce (sat) i f = 20ma, i c = 0.5ma D 0.1 0.35 v rise time t r D 15 50 coupled fall time t f v cc = 5v, i c = 1ma, r l = 1k ? (note 2) D 15 50 s (note 2): switching time measurement circuit and waveform precautions 1. when removing flux with chemicals after soldering, cl ean only the soldered part of the leads. do not immerse the entire package in the cleaning solvent. chemical residu e on the led emitter or the phototransistor may adversely affect the optical characteristics of the device and may drastically reduce the conversion efficiency. 2. care must taken in relation to the environm ent in which the device is to be installed. oil or chemicals may cause th e package to melt or crack. 3. mount the device on a level surface. 4. keep the device away from external light. although the phototransistor is of low optical sensitivity, the device may malfunction if external light with a wavelength of 700 nm or more is allowed to impinge on it. 5. conversion efficiency falls over time due to the current which flow s in the infrared led. when designing a circuit, take into account this change in conversion efficiency over time. the ratio of fluctuation in conversi on efficiency to fluctuation in in frared led optical output is 1:1. i f v cc v out r l i f v out t d t r t s t f 10% 90% (0) o p (t) o p (0) f i / c i (t) f i / c i =
TLP832(f) 2007-10-01 4 package dimensions 11-14f1 unit: mm weight: 0.58 g (typ.) pin connection 1.anode 2.cathode 3.collector 4.emitter 1 2 3 4
TLP832(f) 2007-10-01 5 stick specification of TLP832(f) 15.8 9.4 6.4 top view 3.15 toshiba antistatic made in japan 633 650.01.5 toshiba antistatic made in japan unit:mm unless otherwise specified, tolerance:0.3mm material:polyvinyl chloride (pvc) cross section 14.6 1.6 5.0 3.3 4.0 10.8 14.8 0.6 (note) : marking color is red.
TLP832(f) 2007-10-01 6 packing format pack 100 devices are packed in a magazine and put it in a carton. the carton contains 20 magazines. label stopper TLP832(f) stopper pin magazine plastic adhesive tape barcode label quality assurance seal carton containing 20 magazines 680mm magazine containing 100 devices 85mm 95mm product number:TLP832 add. code:(f) quantity lot number toshiba code barcode p/n type add.c note TLP832 qty pcs. made in japan toshiba
TLP832(f) 2007-10-01 7 i f ? t a ambient temperature t a (c) allowable forward current i f (ma) 80 0 60 40 20 0 20 40 60 80 100 p c ? t a allowable collector power dissipation p c (mw) ambient temperature t a (c) 80 0 0 60 40 20 20 40 60 80 100 i f ? v f (typ.) forward voltage v f (v) forward current i f (ma) 50 1 0.8 30 3 5 10 0.9 1.0 1.1 1.2 1.3 1.4 t a =75c 50 2 5 0 ? 25 i c /i f ? i f forward current i f (ma) current transfer ratio i c /i f (%) t a = 25 c v ce = 2 v v ce = 0.4 v 100 3 1 50 30 10 5 3 10 30 50 100 5 sample 2 sample 1 i c ? i f forward current i f (ma) collector current i c (ma) t a = 25 c v ce = 2 v v ce = 0.4 v 10 0.1 1 5 3 1 0.5 0.3 3 5 10 30 50 100 sample 2 sample 1 i c ? v ce ( typ.) collector-emitter voltage v ce (v) collector current i c (ma) t a = 25 c 6 1 0 5 4 3 0 2 2 4 6 8 10 12 20 15 10 i f = 5 ma
TLP832(f) 2007-10-01 8 relative i c ? t a (typ.) ambient temperature t a (c) relative collector current v ce = 2 v i f = 20 ma i f = 10 ma i f = 5 ma 1.2 ? 40 1.0 0.8 0.6 ? 20 20 40 80 100 0.4 0.2 0 60 v ce(sat) ? t a (typ.) ambient temperature t a (c) collector-emitter saturation voltage v ce ( sat ) (v) i c = 0.5 ma i f = 20 ma 0.20 ? 40 0.16 0.12 0.08 ? 20 20 40 80 100 0.04 0 0 60 switching characteristics (saturated operation) (typ.) load resistance r l (k ? ) switching time ( s) t a = 25 c i f = 20 ma v cc = 5 v v out R 4.65 v 3000 1 1000 500 100 3 10 30 300 500 50 3 5 50 300 30 10 5 100 t f t s t r t d i d (i ceo ) ? t a (typ.) ambient temperature t a (c) dark current i d (i ceo ) ( a) 5 10 ? 4 0 1 10 ? 1 10 ? 2 10 ? 3 20 40 60 80 100 120 v ce = 24 v 10 5 switching characteristics (non saturated operation) (typ.) load resistance r l (k ? ) switching time ( s) t a = 25 c v cc = 5 v v out = 1 v 500 0.5 0.1 100 30 10 1 0.3 0.5 1 3 5 10 30 50 300 50 5 3 0.3 t r , t f t d t s
TLP832(f) 2007-10-01 9 relative positioning of shutter and device for normal operation position the shutter and the device as shown in the figure below. by considering the device?s detection direction characteristic and switching ti me, determine the shutter slit width and pitch. detection position characteristics(1) (typ.) distance d (mm) relative collector current 1.2 0.2 ? 3 1.0 0.8 0.6 0.4 ? 2 ? 1 0 1 2 3 4 0 ? + 0 d detection position d = 0 0.3 mm i f = 10 ma v ce = 2 v t a = 25 c d=7.95 ? 1.35 mm detection position characteristics(2) (typ.) distance d (mm) relative collector current 1.2 0.2 5 1.0 0.8 0.6 0.4 6 7 8 9 10 11 12 0 d shutter detection p osition +1.25 i f = 10 ma v ce = 2 v t a = 25 c shutte r shutter a a 9.2min 6.6max 7.95 cross section between a and a center of sensor unit:mm
TLP832(f) 2007-10-01 10 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? gaas(gallium arsenide) is used in this product. the dus t or vapor is harmful to the human body. do not break, cut, crush or dissolve chemically. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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